The key role of charge carriers scattering on polar optical phonons in semiconductors for thermoelectric energy conversion
Identifieur interne : 000345 ( Main/Repository ); précédent : 000344; suivant : 000346The key role of charge carriers scattering on polar optical phonons in semiconductors for thermoelectric energy conversion
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Abstract
The Boltzmann equation for charge carriers in n-type InSb is solved by numerical procedure. Temperature and donor atoms concentration dependences of kinetic coefficients are studied with respect to the thermoelectric energy conversion efficiency. It is found that the mechanism of the charge carriers scattering on polar optical phonons is of crucial importance for thermoelectric figure of merit of semiconductors. High thermoelectric efficiency of compounds and alloys comprising such heavy atoms as Pb or Bi is explained by weakening of the above mentioned scattering mechanism due to gigantic values of dielectric constants of substances caused by high polarizability of heavy atoms.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The key role of charge carriers scattering on polar optical phonons in semiconductors for thermoelectric energy conversion</title><author><name sortKey="Orlov, V G" uniqKey="Orlov V">V. G. Orlov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Research Centre "Kurchatov Institute", Kurchatov sq. 1</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Moscow Physical Technical Institute (State University)</s1><s2>Dolgoprudnii, 141700 Moscow Region</s2><s3>RUS</s3><sZ>1 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Moscow Physical Technical Institute (State University)</wicri:noRegion></affiliation></author><author><name sortKey="Sergeev, G S" uniqKey="Sergeev G">G. S. Sergeev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Research Centre "Kurchatov Institute", Kurchatov sq. 1</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0363665</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0363665 INIST</idno><idno type="RBID">Pascal:13-0363665</idno><idno type="wicri:Area/Main/Corpus">000424</idno><idno type="wicri:Area/Main/Repository">000345</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-1098</idno><title level="j" type="abbreviated">Solid state commun.</title><title level="j" type="main">Solid state communications</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Boltzmann equation</term><term>Electron-phonon interactions</term><term>Energy conversion</term><term>Figure of merit</term><term>Indium antimonides</term><term>Kinetics</term><term>Optical phonons</term><term>Permittivity</term><term>Semiconductor materials</term><term>Thermoelectric conversion</term><term>Thermoelectric power</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Interaction électron phonon</term><term>Facteur mérite</term><term>Phonon optique</term><term>Conversion énergie</term><term>Equation Boltzmann</term><term>Cinétique</term><term>Pouvoir thermoélectrique</term><term>Constante diélectrique</term><term>Conversion thermoélectrique</term><term>Semiconducteur</term><term>Antimoniure d'indium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The Boltzmann equation for charge carriers in n-type InSb is solved by numerical procedure. Temperature and donor atoms concentration dependences of kinetic coefficients are studied with respect to the thermoelectric energy conversion efficiency. It is found that the mechanism of the charge carriers scattering on polar optical phonons is of crucial importance for thermoelectric figure of merit of semiconductors. High thermoelectric efficiency of compounds and alloys comprising such heavy atoms as Pb or Bi is explained by weakening of the above mentioned scattering mechanism due to gigantic values of dielectric constants of substances caused by high polarizability of heavy atoms.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1098</s0></fA01><fA02 i1="01"><s0>SSCOA4</s0></fA02><fA03 i2="1"><s0>Solid state commun.</s0></fA03><fA05><s2>174</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>The key role of charge carriers scattering on polar optical phonons in semiconductors for thermoelectric energy conversion</s1></fA08><fA11 i1="01" i2="1"><s1>ORLOV (V. G.)</s1></fA11><fA11 i1="02" i2="1"><s1>SERGEEV (G. S.)</s1></fA11><fA14 i1="01"><s1>National Research Centre "Kurchatov Institute", Kurchatov sq. 1</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Moscow Physical Technical Institute (State University)</s1><s2>Dolgoprudnii, 141700 Moscow Region</s2><s3>RUS</s3><sZ>1 aut.</sZ></fA14><fA20><s1>34-37</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10917</s2><s5>354000501073000080</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>28 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0363665</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solid state communications</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The Boltzmann equation for charge carriers in n-type InSb is solved by numerical procedure. Temperature and donor atoms concentration dependences of kinetic coefficients are studied with respect to the thermoelectric energy conversion efficiency. It is found that the mechanism of the charge carriers scattering on polar optical phonons is of crucial importance for thermoelectric figure of merit of semiconductors. High thermoelectric efficiency of compounds and alloys comprising such heavy atoms as Pb or Bi is explained by weakening of the above mentioned scattering mechanism due to gigantic values of dielectric constants of substances caused by high polarizability of heavy atoms.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70B20P</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Interaction électron phonon</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Electron-phonon interactions</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Facteur mérite</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Figure of merit</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Factor mérito</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Phonon optique</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Optical phonons</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Conversion énergie</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Energy conversion</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Equation Boltzmann</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Boltzmann equation</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Cinétique</s0><s5>09</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Kinetics</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Pouvoir thermoélectrique</s0><s5>10</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Thermoelectric power</s0><s5>10</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Constante diélectrique</s0><s5>11</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Permittivity</s0><s5>11</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Conversion thermoélectrique</s0><s5>12</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Thermoelectric conversion</s0><s5>12</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>15</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>15</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Antimoniure d'indium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>16</s5></fC03><fN21><s1>343</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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